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首页> 外文期刊>Journal of Applied Physics >Influence of fractal and multifractal morphology on the wettability and reflectivity of crystalline-Si thin film surfaces as photon absorber layers for solar cell
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Influence of fractal and multifractal morphology on the wettability and reflectivity of crystalline-Si thin film surfaces as photon absorber layers for solar cell

机译:分形和多法形态对晶体 - Si薄膜表面润湿性和反射率的影响,作为太阳能电池的光子吸收层

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摘要

Crystalline Si films incorporated with Al are important for applications in microelectronics and solar cells. In this paper, we report on the morphology of crystalline Si surfaces in Al/amorphous-Si bilayer thin films under ion beam irradiation at 100 °C. Micro-Raman and transmission electron microscopy studies show that best crystallization is achieved at a fluence of 1 × 10~(12) ions cm~(-2). The contact angle of Si surfaces (after chemically etched unreacted Al), referred to as absorber surfaces, decreases with increasing ion fluence. These surfaces are hydrophobic in nature and the hydrophobicity decreases with increasing ion fluence. Fractal and multifractal analysis of atomic force microscopy images, along with system energy/unit cell and Laplace pressure calculations, supports our observations. Moreover, the calculated multiple scattering cross sections of light, along with reflectivity measurements, indicate that absorber surfaces of best crystalline films have the lowest reflectivity. The present results suggest that such surfaces having low optical reflectance and a hydrophobic nature can be used as photon absorber layers for advanced solar cell devices.
机译:掺入Al的结晶Si膜对微电子和太阳能电池的应用很重要。在本文中,我们在100℃下离子束照射下的Al / Amorphous-Si双层薄膜中结晶Si表面的形态报告。微拉曼和透射电子显微镜研究表明,在1×10〜(12)离子Cm〜(-2)的流量下实现了最佳结晶。 Si表面(在化学蚀刻未反应的Al)的接触角,称为吸收体表面,随着离子流量的增加而降低。这些表面是疏水性的,疏水性随着离子流量的增加而降低。原子力显微镜图像的分形和多重分析,以及系统能量/单元电池和拉普拉斯压力计算,支持我们的观察。此外,计算出的多个光散射横截面以及反射率测量表明最佳结晶膜的吸收器表面具有最低的反射率。本结果表明,具有低光学反射率和疏水性质的这种表面可以用作用于高级太阳能电池装置的光子吸收层。

著录项

  • 来源
    《Journal of Applied Physics》 |2021年第4期|045301.1-045301.13|共13页
  • 作者单位

    Department of Pure and Applied Physics Guru Ghasidas Vishwavidyalaya (A Central University) Bilaspur 495009 India;

    Department of Physics Deen Dayal Upadhyay Govt. PG College Prayagraj 221508 India;

    Department of Physics Malaviya National Institute of Technology Jaipur 302017 India;

    Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi 110067 India School of Physical Sciences Jawaharlal Nehru University New Delhi-110067 India;

    Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi 110067 India;

    Institute of Physics Sachivalaya Marg Bhubaneswar 751005 India Homi Bhabha National Institute Training School Complex Anushakti Nagar Mumbai 40008 India;

    Department of Physics Shiv Nadar University Gautam Buddha Nagar 201314 India;

    Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi 110067 India;

    Department of Pure and Applied Physics Guru Ghasidas Vishwavidyalaya (A Central University) Bilaspur 495009 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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