...
机译:大面积AlN / GaN双屏障共振隧道二极管中高度可重复室温负差分性的演示
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Nanjing Electronic Devices Institute China Electronics Technology Group Corporation Nanjing 210016 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 People's Republic of China;
机译:分子束外延生长的AlN / GaN共振隧穿二极管中具有高度可重复的室温负差分电阻
机译:室温下GaN / AlN共振隧穿二极管中负差分电阻的演示
机译:低铝含量AlGaN / GaN双势垒共振隧穿二极管的室温负差电阻特性的可靠性
机译:RF-等离子体辅助分子束外延生长的AlN / GaN双势垒共振隧穿二极管的室温负差分电阻
机译:双势垒谐振隧穿二极管的阻抗,等效电路和电容
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:GaN / alN中可重复的室温负微分电导 谐振隧穿二极管