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首页> 外文期刊>Journal of Applied Physics >Photophysics behind luminescence phenomenon in conducting conjugate polymer blends for application as an emissive layer in PLEDs
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Photophysics behind luminescence phenomenon in conducting conjugate polymer blends for application as an emissive layer in PLEDs

机译:发光现象背后的光学药物在将缀合物聚合物混合中施用作为镀层的发光层

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摘要

Luminescence quenching by polarons is an important loss mechanism in polymer light-emitting diodes (PLEDs). Steady-state and time-resolved photoluminescence spectroscopy of polyaniline (PAni) thin films with varying polaron doping has helped us to realize polaron density-dependent photoluminescence quenching mechanisms inside the thin films. A sharp reduction in photoluminescence emission spectra has been observed at doping densities between 10~(17) and 10~(19)cm~(-3). This doping concentration-dependent photoluminescence phenomenon in PAni is modeled quantitatively using quenching of excitons by polarons through long-range Forster resonance energy transfer (FRET) and short-range charge transfer (CT) mechanisms. The results match well with the experimental findings that demonstrate that both models need to be considered to explain the mechanisms of luminescence quenching. FRET and CT phenomena inside an emissive layer of PLEDs have been demonstrated to play a pivotal role in the quantum efficiency roll-off phenomenon at high current density using experimentally obtained and theoretically calculated kinetic quenching parameters. To get rid of low luminescence in PAni, it has been blended with poly(methyl) methacrylate (PMMA) that enhances its luminescence manifold. The blending of PMMA leads to the introduction of a new photophysical phenomenon-donor PMMA concentration-dependent FRET contrary to original FRET theory proposed by Forster. Concentration-dependent FRET leads to a sharp drop in luminescence from the polymer blend after reaching a critical concentration of PMMA. Therefore, the present study explores the reason behind low luminescence in conducting polymers and demonstrates ways to mitigate it along with providing an account of the photo-physics of the conducting polymer as an emissive layer in PLEDs.
机译:通过优极淬火的发光淬火是聚合物发光二极管(PLED)中的重要损失机制。具有不同极化掺杂的聚苯胺(PANI)薄膜的稳态和时间分辨的光致发光光谱有助于我们实现薄膜内的极化密度依赖性的光致发光淬火机构。在10〜(17)和10〜(19)cm〜(-3)之间的掺杂密度下观察到光致发光发射光谱的急剧降低。这种掺杂浓度依赖性的光致发光现象在PANI中使用远程孔谐振能量转移(FRET)和短程电荷转移(CT)机构来定量使用极精的激子淬火进行建模。结果与实验结果相匹配,证明需要考虑两个模型来解释发光淬火机制。已经证明了Pleds发光层内部的褶皱和CT现象在使用实验获得的和理论上计算的动力学淬火参数的高电流密度下在量子效率滚降现象中发挥枢轴作用。为了在PANI中除去低发光,它被混合与聚(甲基)甲基丙烯酸酯(PMMA)混合,其增强其发光歧管。 PMMA的混合导致引入新的光药现象 - 供体PMMA浓度依赖性符合Forster提出的原始FRET理论的依赖性尺寸。在达到PMMA的临界浓度后,浓度依赖性褶皱导致来自聚合物共混物的发光急剧下降。因此,本研究探讨了导电聚合物的低发光背后的原因,并说明了减轻其的方法以及提供导电聚合物的光学物理学的描述作为镀层的发光层。

著录项

  • 来源
    《Journal of Applied Physics》 |2021年第1期|013102.1-013102.18|共18页
  • 作者单位

    Department of Physics Micro and Nano Science Laboratory Indian Institute of Technology (Indian School of Mines) Dhanbad Jharkhand 826004 India;

    Department of Physics Micro and Nano Science Laboratory Indian Institute of Technology (Indian School of Mines) Dhanbad Jharkhand 826004 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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