...
首页> 外文期刊>Journal of Applied Physics >Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime
【24h】

Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime

机译:从双屏障谐振隧道二极管偏向自振荡制度的脉冲太赫兹辐射

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I-V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
机译:从偏置到IV特性的负差分导电区的双屏障谐振隧道二极管(RTD)的二翼谐振隧道二极管(RTD)的辐射计响应的研究表明RTD在内在自振荡的时期中发出两个脉冲当前的。弓辐射计脉冲重复率是电流内在自振荡的基本频率的倍数。在两个关键点处检测到钻弓,它们之间的距离是当前自振荡的周期的一半或三分之一。对电流自振荡和提高计响应的分析表明,当隧道电子被捕获(第一脉冲)然后从(第二脉冲)MINIBAND状态释放时,激发THz光子发射。

著录项

  • 来源
    《Journal of Applied Physics》 |2020年第22期|224303.1-224303.11|共11页
  • 作者单位

    P.N. Lebedev Physical Institute of Russian Academy of Sciences 119991 Moscow Russia;

    Moscow State Pedagogical University 119435 Moscow Russia;

    Moscow State Pedagogical University 119435 Moscow Russia;

    Moscow State Pedagogical University 119435 Moscow Russia;

    V.G. Mokerov Institute of Ultra High Frequency Electronics of Russian Academy of Sciences 117950 Moscow Russia Institute for Physics of Microstructures of Russian Academy of Sciences 603950 Nizhny Novgorod Russia;

    V.G. Mokerov Institute of Ultra High Frequency Electronics of Russian Academy of Sciences 117950 Moscow Russia;

    V.G. Mokerov Institute of Ultra High Frequency Electronics of Russian Academy of Sciences 117950 Moscow Russia;

    Moscow State Pedagogical University 119435 Moscow Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号