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High thermopower and power factors in EuFeO_3 for high temperature thermoelectric applications: A first-principles approach

机译:高温热电应用Eufeo_3中的高温电压和电源因素:一种原则方法

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摘要

Thermoelectric materials that can work at operating temperatures of t > 900 K are highly desirable since the key thermoelectric factors of most thermoelectric materials degrade at high temperatures. In this work, we investigate the high temperature thermoelectric performance of EuFeO_3 using a combination of first-principles methods and semi-classical Boltzmann transport theory. High temperature thermoelectric performance is achieved owing to the presence of corrugated flatbands in the valence band region and extremely flatbands in the conduction band region. The lowest energetic structure of EuFeO_3 lies within a G-type antiferromagnetic configuration, and the effect of compressive and tensile strains (-7% to +7%) along the (a, b) axes on thermoelectric performance is systematically analyzed. An extremely high value of the Seebeck coefficient (more than 1000 μV/K) is consistently recorded in the high temperature region between 900 K and 1400 K in this material. Furthermore, electrical conductivities and power factors are high and electronic thermal conductivities are low in the considered range of temperatures. The calculated theoretical minimum lattice conductivity is small, estimated at around 1.47-1.54 Wm~(-1) K~(-1). A compressive strain of -3% is revealed to be the optimum level of strain for enhancing the key thermoelectric factors. Overall, p-type doping shows better thermoelectric performance than n-type doping in EuFeO_3.
机译:可以在T> 900k的工作温度下工作的热电材料是非常理想的,因为大多数热电材料的关键热电因子在高温下降解。在这项工作中,我们使用一本原则方法和半古典Boltzmann运输理论的组合来研究Eufeo_3的高温热电性能。由于在距离频带区域中的波纹平带存在波纹的平坦带和导电带区域的极具扁平带,实现了高温热电性能。 EufeO_3的最低能量结构位于G型反铁磁构型内,系统地分析了沿(A,B)轴上的压缩和拉伸菌株(-7%至+ 7%)的效果。系统地分析了对热电性能的影响。塞贝克系数的极高值(超过1000μV/ k)在该材料中的高温区域中一致地记录在900k和1400k之间。此外,导电性和电源因子高,电子热导率在考虑的温度范围内低。计算出的理论最小晶格导率小,估计在1.47-1.54wm〜(-1)k〜(-1)。为增强关键热电因子的压缩菌株为-3%的抑制菌株是最佳应变水平。总体而言,P型掺杂显示出比EUFEO_3中的N型掺杂更好的热电性能。

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  • 来源
    《Journal of Applied Physics》 |2020年第15期|155101.1-155101.10|共10页
  • 作者单位

    Asia Pacific Center for Theoretical Physics POSTECH Campus Pohang 37673 South Korea;

    Asia Pacific Center for Theoretical Physics POSTECH Campus Pohang 37673 South Korea Department of Physics Mapua University Intramuros Manila 1002 Philippines;

    Department of Physics School of Applied Sciences University of Science and Technology Meghalaya Ri Bhoi 793101 India;

    Chemistry Division School of Advanced Sciences Vellore Institute of Technology (VIT) Chennai Campus Chennai 600127 India;

    Division of Physics School of Advanced Sciences Vellore Institute of Technology (VIT) Chennai Campus Chennai 600127 India;

    Department of Chemistry Loyola College (Autonomous) Nungambakkam Chennai 600034 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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