机译:HFO_2 / TIO_X双层结构函忆阻,具有线性电导调谐,用于高密度记忆和神经形式计算
School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 People's Republic of China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China School of Mechanical and Electronic Engineering East China University of Technology Nanchang 330013 People's Republic of China;
School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 People's Republic of China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 People's Republic of China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 People's Republic of China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 People's Republic of China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China;
School of Mechanical and Electronic Engineering East China University of Technology Nanchang 330013 People's Republic of China;
机译:通过插入神经形态计算的超薄Al_2O_3层来增强TiO_X / HFO_2 RRAM的突触行为
机译:磁畴壁型旋转函数模拟神经形态计算的线性和对称电导响应
机译:具有突触特征的氮掺杂二氧化钛纳米峰阵列函数和神经形态计算的可调记忆寿命
机译:用于新兴神经形态计算硬件设计的动态线性和非线性忆阻器设备模型分析
机译:神经晶体计算忆阻器装置的建模与实验特征
机译:旋转扭矩映射器:基于垂直磁隧道结的旋转扭矩映射用于神经晶体计算(ADV。SCI。10/2021)
机译:动态线性和非线性忆阻器器件模型的分析 新兴的神经形态计算硬件设计
机译:新兴神经形态计算硬件设计的动态线性和非线性忆阻器器件模型分析