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首页> 外文期刊>Journal of Applied Physics >First principles investigations of Fe~(3+) impurity and Fe~(3+) + V_(cd)~+ complex in strongly confined CdSe quantum dot
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First principles investigations of Fe~(3+) impurity and Fe~(3+) + V_(cd)~+ complex in strongly confined CdSe quantum dot

机译:第一个原理对Fe〜(3+)杂质和Fe〜(3+)+ v_(CD)〜+复合物的研究在强大限制CDSE量子点中

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摘要

Solitary dopant or defect in a semiconductor is the basis of the emerging field of optoelectronics known as solotronics. It has been shown that the spin of a single magnetic ion impurity can be manipulated optically. Among the magnetic ions, Fe~(3+) has been proposed as a primary candidate for the design of quantum dots (QDs) for solotronics because of its zero nuclear spin in contrast to Mn~(2+) and larger magnetic moment compared to Fe~(2+). In this work, we performed density function theory calculations to determine optimal parameters for the colloidal synthesis of single Fe_(Cd)~(3+) over Fe_(Cd)~(2+) in CdSe of 1 nm in radius. We also investigated Fe~(3+) plus Cd vacancy complex (Fe_(Cd)~(3+) + V_(Cd)~- ). Transition energy level calculations show Fe_(Cd)~(3+) to be a deep-level donor and V_(Cd)~- to be a shallow acceptor. Charge difference plots show that the charge of the ionized electron is localized around Fe_(Cd)~(3+) . Tetrahedral symmetry is retained at the Fe_(Cd)~(3+) site. The magnetic moment of Fe~(3+) is almost the same in the core and at the surface and is equal to ~4.27 μ_B for passivated QD. The large moment can be manipulated for spin control in conjunction with unoccupied vacancy states of the triplet t_2 level of the shallow V_(Cd) acceptor to create a hole spin current in a lithographically patterned surface.
机译:半导体中的孤独掺杂剂或缺陷是称为唯一一体的光电子领域的基础。已经表明,可以光学操纵单一磁离子杂质的旋转。在磁离子中,已经提出了Fe〜(3+)作为铲子设计的量子点(QDS)的主要候选者,因为其零核旋转与Mn〜(2+)和较大的磁矩相比Fe〜(2+)。在这项工作中,我们进行了密度函数理论计算,以确定在半径中CDSE中的CDSE中的Fe_(CD)〜(3+)胶体合成的最佳参数。我们还调查了Fe〜(3+)加上CD空位复合体(FE_(CD)〜(3+)+ V_(CD)〜 - )。过渡能级计算显示FE_(CD)〜(3+)是深度级捐赠者和v_(CD)〜 - 是浅受受体。电荷差异图表明,电离电子的电荷围绕Fe_(CD)〜(3+)局部。在Fe_(CD)〜(3+)位点处保留四面体对称性。 Fe〜(3+)的磁矩在核心和表面上几乎相同,并且钝化QD等于〜4.27μm。可以与浅V_(CD)受体的三重态T_2水平的超别空位状态结合旋转控制来操纵旋转控制,以在光刻图案化的表面中产生孔旋转电流。

著录项

  • 来源
    《Journal of Applied Physics 》 |2020年第17期| 173901.1-173901.10| 共10页
  • 作者

    George Kurian; Mogus Mochena;

  • 作者单位

    Department of Physics Florida A&M University Tallahassee Florida 32307 USA;

    Department of Physics Florida A&M University Tallahassee Florida 32307 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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