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机译:Si-optz晶片上应变外延Ge的L波段光学吸收的增强:延伸GE光电探测器
Department of Electrical and Electronic Information Engineering Toyohashi University of Technology 1-1 Hibarigaoka Tempaku Toyohashi Aichi 441-8580 Japan;
Department of Materials Engineering The University of Tokyo 7-3-1 Hongo Bunkyo Tokyo 113-8656 Japan;
Graduate School of Material Science University of Hyogo 3-2-1 Kouto Kamigori Hyogo 678-1297 Japan;
Synchrotron Radiation Nanotechnology Center University of Hyogo 1-490-2 Kouto Shingu Tatsuno Hyogo 679-5165 Japan;
Department of Electrical and Electronic Information Engineering Toyohashi University of Technology 1-1 Hibarigaoka Tempaku Toyohashi Aichi 441-8580 Japan;
机译:应变和松弛外延Ge_(1-x)Sn_x薄膜中锡局部环境的扩展X射线吸收精细结构研究
机译:Si(100)衬底上的拉伸应变外延Ge膜及其在L波段电信中的潜在应用
机译:应变双势垒量子阱红外光电探测器中的子带间光吸收
机译:石英衬底上生长的锗中增强的L波段光吸收
机译:光学天线增强了纳米级锗光电探测器。
机译:使用烃类分子离子植入双外延Si晶片减少CMOS图像传感器像素中的暗电流
机译:应变和松弛外延Ge1-xSnx薄膜中锡局部环境的扩展X射线吸收精细结构研究