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首页> 外文期刊>Journal of Applied Physics >Thermal dynamic imaging of mid-infrared quantum cascade lasers with high temporal-spatial resolution
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Thermal dynamic imaging of mid-infrared quantum cascade lasers with high temporal-spatial resolution

机译:具有高颞空间分辨率中红外量子级联激光器的热动态成像

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摘要

The time-resolved (TR) temperature profile of actively biased mid-infrared quantμm cascade lasers (MIR QCLs) was measured by using charge-coupled-device (CCD)-based thermoreflectance microscopy (TRM) with an ultrafast temporal resolution of 50 ns and a high spatial resolution of 390 nm. Based on the measured TR two-dimensional (2D) temperature profiles, the heat generation and dissipation dynamics within the lasers have been investigated. It is found that the active-region temperature increases quickly to a peak value (up to ~100°C above ambient room temperature) within 500 ns upon pulsed current injection of 6 A. The heat dissipation to the top and bottom cladding layers of the device is initially comparable, yet it evolves differently with time. Within l-2μs, the heat dissipation to the top cladding is substantially reduced and most of the heat is drained to the substrate through the bottom cladding layer. This constrained heat dissipation results in the elevated temperature in the active region, leading to thermal quenching of lasing operation, which is confirmed by experimental light-current-voltage measurement and theoretical thermal modeling. The TRM is an enabling tool for probing internal thermal dynamics of many active electronic and photonic devices, particularly for those needing special heat and thermal arrangement.
机译:通过使用50 ns的超快时间分辨率,通过使用50 ns和高空间分辨率为390 nm。基于测量的TR二维(2D)温度曲线,研究了激光器内的发热和耗散动力学。发现在脉冲电流注入6A时,主动区域温度在500ns内快速增大到500ns内的峰值(高达约100°C)。散热到顶部和底部包层的散热设备最初是可比的,但它随着时间的推移而变化。在L-2μs内,对顶部包层的散热显着降低,大部分热量通过底部包层的层排出到基板上。这种约束的散热导致有源区的温度升高,导致激光操作的热淬火,这通过实验光电流测量和理论热建模确认。 TRM是用于探测许多有源电子和光子器件的内部热动态的启用工具,特别是对于需要特殊的热和热布置的那些。

著录项

  • 来源
    《Journal of Applied Physics》 |2020年第8期|083106.1-083106.8|共8页
  • 作者单位

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada;

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada;

    Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan 430074 China;

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada;

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada;

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada;

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada;

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada;

    Department of Electrical and Computer Engineering Waterloo Institute for Nanotechnology University of Waterloo Waterloo N2L 3d Canada School of Physics and Electronics Henan University No. 1 Jinming Street Kaifeng Henan 475001 People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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