A multiscale materials-to-systems modeling of polycrystalline PbSe photodetectors

摘要

We present a physics based multiscale materials-to-systems model for polycrystalline PbSe photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a band structure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique band structure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted PbSe vertical bar PbI2 interface, while electrons are trapped in the bulk of the film intergrain regions. These flows together form the 2-current theory of photoconduction that quantitatively captures the I-V relationship in these films. To capture the effect of pixel scaling and trapped carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise, etc. that connect the detector performance metrics such as responsivity R and specific detectivity D* intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital Read-Out Integrated Circuit cell designs to simulate and optimize high performance Focal Plane Arrays which form a critical component in the rapidly expanding market of self-driven automotive, internet of things security, and embedded applications. Published under license by AIP Publishing.