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Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories

机译:时间序列统计分析:一种强大的工具,可以评估电阻切换存储器的变化

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摘要

Time series statistical analyses (TSSA) have been employed to evaluate the variability of resistive switching memories and to model the set and reset voltages for modeling purposes. The conventional procedures behind time series theory have been used to obtain autocorrelation and partial autocorrelation functions and determine the simplest analytical models to forecast the set and reset voltages in a long series of resistive switching processes. To do so, and for the sake of generality in our study, a wide range of devices have been fabricated and measured. Different oxides and electrodes have been employed, including bilayer dielectrics in devices such as Ni/HfO2/Si-n(+), Cu/HfO2/Si-n(+), and Au/Ti/TiO2/SiOx/Si-n(+). The TSSA models obtained allowed one to forecast the reset and set voltages in a series if previous values were known. The study of autocorrelation data between different cycles in the series allows estimating the inertia between cycles in long resistive switching series. Overall, TSSA seems to be a very promising method to evaluate the intrinsic variability of resistive switching memories. Published under license by AIP Publishing.
机译:已经采用了时间序列统计分析(TSSA)来评估电阻开关存储器的可变性,并为模拟用于建模目的的集合和复位电压。时间序列理论背后的传统程序已被用于获得自相关和部分自相关函数,并确定最简单的分析模型,以预测长一系列电阻切换过程中的集合和复位电压。为此,为了在我们的研究中的普遍性,已经制造和测量了各种设备。已经采用了不同的氧化物和电极,包括在诸如Ni / HfO2 / Si-N(+),Cu / HfO2 / Si-N(+)的装置中的双层电介质,以及Au / Ti / TiO2 / SiOx / Si-N( +)。如果先前的值已知,则获得TSSA模型允许预测系列中的复位和设置电压。系列中不同循环之间的自相关数据的研究允许在长电阻切换系列中估算循环之间的惯性。总体而言,TSSA似乎是评估电阻切换存储器的内在变化的非常有希望的方法。通过AIP发布在许可证下发布。

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  • 来源
    《Journal of Applied Physics》 |2019年第17期|174504.1-174504.11|共11页
  • 作者单位

    Univ Granada Fac Ciencias Dept Elect & Tecnol Comp Avd Fuentenueva S-N E-18071 Granada Spain;

    Univ Granada Fac Ciencias Dept Estadist & Invest Operat Avd Fuentenueva S-N E-18071 Granada Spain;

    Univ Granada Fac Ciencias Dept Estadist & Invest Operat Avd Fuentenueva S-N E-18071 Granada Spain;

    Univ Granada Fac Ciencias Dept Elect & Tecnol Comp Avd Fuentenueva S-N E-18071 Granada Spain;

    Soochow Univ Inst Funct Nano & Soft Mat FUNSOM Collaborat Innovat Ctr Suzhou Nanosci & Technol 199 Ren Ai Rd Suzhou 215123 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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