首页> 外文期刊>Journal of Applied Physics >The performance enhancement and temperature dependence of piezoelectric properties for Pb(Mg_(1/3)Nb_(2/3))O_3-0.30PbTiO_3 single crystal by alternating current polarization
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The performance enhancement and temperature dependence of piezoelectric properties for Pb(Mg_(1/3)Nb_(2/3))O_3-0.30PbTiO_3 single crystal by alternating current polarization

机译:交流极化作用下Pb(Mg_(1/3)Nb_(2/3))O_3-0.30PbTiO_3单晶的压电性能和温度依赖性

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摘要

The comparison and analysis of piezoelectric properties for [001]-oriented PMN-0.30PT by different polarization conditions were investigated. It should be noticed that the average piezoelectric coefficients d(33) of PMN-0.30PT crystals were 1860 pC/N by alternating current (AC) polarization and 1380 pC/N by direct current (DC) polarization, which indicates a promotion of 35.3%. The domain patterns in the [001] surface of PMN-0.30PT single crystals under different polarization conditions are obtained by piezo-response force microscopy. The enhancement of piezoelectric performance by AC polarization is attributed to the regular stripe domains with high domain wall density. With the temperature increased to TR-T, both the values of dielectric constant epsilon(T)(r) and piezoelectric coefficients d(33) under AC polarization condition maintain higher compared to traditional DC poled samples. In addition, both the values of e(33) and epsilon(S)(33) under AC polarization retain higher than that of DC polarization, suggesting that the special domain structure with high domain wall density by AC polarization keeps a stable state as the temperature increased to TR-T. When the temperature increased from TR-T to TT-C, the piezoelectric properties of crystals (epsilon(T)(r) and d(33)) under different polarization conditions become the same status, which indicates that the domain structure under the different conditions of polarization may tend to the similar state and the extrinsic contribution from the domain wall motion by AC polarization is disappeared. Published under license by AIP Publishing.
机译:研究了不同极化条件下[001]取向PMN-0.30PT压电性能的比较和分析。值得注意的是,PMN-0.30PT晶体的平均压电系数d(33)在交流电(AC)极化下为1860 pC / N,在直流电(DC)极化下为1380 pC / N,表明其提高了35.3 %。通过压电响应力显微镜获得了在不同极化条件下PMN-0.30PT单晶[001]表面的畴图形。通过交流极化增强压电性能的原因是具有高畴壁密度的规则条状畴。随着温度升高至TR-T,与传统的直流极化样品相比,交流极化条件下的介电常数ε(r)和压电系数d(33)均保持较高。此外,交流极化下的e(33)和ε(S)(33)的值均保持高于直流极化的值,这表明交流极化下具有高畴壁密度的特殊畴结构保持了稳定状态。温度升高至TR-T。当温度从TR-T升高到TT-C时,不同极化条件下晶体(epsilon(T)(r)和d(33))的压电特性变为相同状态,这表明在不同极化条件下的畴结构极化条件可能趋于相似的状态,并且由交流极化引起的畴壁运动的外在作用消失了。由AIP Publishing授权发布。

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