Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study

摘要

Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 degrees C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 degrees C caused it to form clusters in the peak region (1020 cm(-3)) of the concentration profile, and diffusion only occurred in the low-concentration tail region ( 10(18) cm(-3)), which is thought to be the well-known transient enhanced diffusion. However, when co-implantation with C was performed, this diffusion was almost completely suppressed in the same annealing temperature range. In the absence of C implantation, annealing at 1000 degrees C caused B clusters to begin to dissolve and B to diffuse out of the peak concentration region. However, this diffusion was also suppressed by C implantation because C atoms trapped B atoms in the kink region found at the B concentration level of 2 x 10(19) cm(-3). At 1200 degrees C, B clusters were totally dissolved and a strong B diffusion occurred. In contrast to lower annealing temperatures, this diffusion was actually enhanced by C implantation. It is believed that Si interstitials play an important role in the interaction between B and C. This kind of comprehensive investigation yields important information for optimizing ion implantation and annealing processes. Published by AIP Publishing.