Inversion asymmetry potential tuning of topological insulator dots with impurities

摘要

By proposing an effective method for the coupled modified Dirac equation, the effects of structure inversion asymmetry on the confined states in quantum dots of three-dimensional topological ultrathin films are investigated. It is found that the presence or absence of the quantized edge states can be controlled by the inversion asymmetry potential. The tuning of the potential to the spins of edge and nonedge states is quite different. In the presence of impurities, the mixing between the edge and nonedge states can be largely enhanced and effectively tuned by the potential. The finding will be useful to design relevant nanodevices. Published by AIP Publishing.