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首页> 外文期刊>Journal of Applied Physics >High temperature impedance properties and conduction mechanism of W~(6+)-doped CaBi_4Ti_4O_(15) Aurivillius piezoceramics
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High temperature impedance properties and conduction mechanism of W~(6+)-doped CaBi_4Ti_4O_(15) Aurivillius piezoceramics

机译:W〜(6+)掺杂CaBi_4Ti_4O_(15)Aurivillius压电陶瓷的高温阻抗特性和导电机理

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摘要

Effects of W6+ doping on the phase structural and electrical properties, especially the conduction mechanism at a higher temperature of CaBi4Ti4O15 Aurivillius piezoceramics, have been investigated systematically. The conductivity properties at a temperature range from 500 degrees C to 650 degrees C have been characterized by complex impedance spectroscopy. The conductivity shows a nature of ionic conduction mechanism and non-Debye relaxation process at a higher temperature. The non-Debye relaxation behavior and conduction process are dominated by the jump of charge carriers, which can be demonstrated by the similar values of the relaxation activation energy (1.45 eV), hopping conduction energy (1.50 eV), and dc conduction energy (1.39 eV). Meanwhile, the piezoelectric coefficient d(33) of CaBi4Ti4O15 has been improved from 7.5 pC/N to 17.8 pC/N and keeps good temperature stability up to 650 degrees C with appropriate W6+ doping. These results provide a profound insight into the conduction process and mechanism from the viewpoint of microstructure, which is greatly beneficial for the high-temperature application of Aurivillius piezoceramics. Published by AIP Publishing.
机译:已经系统地研究了W6 +掺杂对相结构和电学性能的影响,特别是CaBi4Ti4O15 Aurivillius压电陶瓷在较高温度下的导电机理。在500℃至650℃的温度范围内的电导率特性已通过复数阻抗谱进行了表征。导电性表现出较高温度下的离子传导机理和非德拜弛豫过程的性质。非德拜弛豫行为和传导过程受电荷载流子跃迁的支配,这可以通过弛豫激活能(1.45 eV),跃迁传导能(1.50 eV)和直流传导能(1.39)的相似值来证明。 eV)。同时,CaBi4Ti4O15的压电系数d(33)已从7.5 pC / N提高到17.8 pC / N,并通过适当的W6 +掺杂保持了高达650摄氏度的良好温度稳定性。这些结果从微观结构的角度为传导过程和机理提供了深刻的见解,这对于高温陶瓷的应用尤为有利。由AIP Publishing发布。

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  • 来源
    《Journal of Applied Physics》 |2018年第20期|204101.1-204101.8|共8页
  • 作者单位

    Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 588 Heshuo Rd, Shanghai 201899, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 588 Heshuo Rd, Shanghai 201899, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 588 Heshuo Rd, Shanghai 201899, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 588 Heshuo Rd, Shanghai 201899, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 588 Heshuo Rd, Shanghai 201899, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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