Hydrostatic and uniaxial effects in InGaN/GaN quantum wells

摘要

We calculate strains, polarizations, and electric fields in InGaN/GaN quantum wells (lattice matched to GaN) under the influence of hydrostatic and uniaxial (along the c-axis) pressure. We calculate the confinement energies for electrons and holes, and we derive simple expressions for the transition energies and their pressure derivatives. We include the changes of the dielectric constant with pressure. The results seem compatible with the experimental data. Published by AIP Publishing.