High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions

摘要

We investigate transport through 6-10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect at low magnetic fields, we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic iron contacts but is absent if iron is replaced by copper or gold electrodes. Possible explanations of the negative MR involve suppression of spin-flip scattering or Zeeman splitting of the tunneling barrier, but neither of these explanations is fully consistent with the data. (C) 2004 American Institute of Physics.