Ultralow-threshold cryogenic vertical-cavity surface-emitting laser with AlAs oxide-GaAs distributed Bragg reflectors

摘要

Data are presented on vertical-cavity surface-emitting lasers designed for cryogenic operation. Low-loss cavity design and high quality factor of the cavity provide the superior lasing characteristics at T=80 K. Ultralow lasing threshold current of 15 muA with external differential quantum efficiency 26% is achieved for a 5 mum aperture device, and a 31% efficiency is achieved for a 8 mum aperture device with a 30 muA threshold and 47 A/cm(2) threshold current density. (C) 2004 American Institute of Physics.