Growth of SiO_x nanowire bunches cocatalyzed with Ga and Ni

摘要

SiO_x nanowire bunches were fabricated on Ni(NO_3)_2~*6H_2O solution-coated Si(111) substrates in a chemical vapor deposition system in the presence of Ga and under the flow of Ar and NH_3 gases. The roles of nickel nitrate hydrate, gallium, and ammonia in the formation of SiO_x nanowire bunches were investigated. It was found that Ni and Ga act as catalysts for the growth, while nickel nitrate hydrate also serves as a source of oxygen. The growth mechanisms of different nanowire structures obtained by varying the fabrication conditions are discussed.