Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers

摘要

We conducted a detailed study of the interlayer exchange coupling (J_(EX)) dependence of thermal stability properties of magnetic tunnel junctions (MTJs) with synthetic antiferromagnetic (Syn-AF) free layers. The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed the existence of strong J_(EX) dependence on thermal stability parameters (K_uV/kT) in Syn-AF free layers. The values of K_uV/kT for MTJs with Syn-AF free layers decreased with a decrease in the strength of J_(EX), and the increase in the effective volume of the Syn-AF free layer disappeared at J_(EX) ≤ 0.52 erg/cm~2. The Syn-AF free layer with J_(EX) > 0.52 erg/cm~2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.