In this article, we compare the direct current (dc) and high-frequency performance of two different organic diode structures, a vertical diode and an organic field effect transistor (OTFT) with shorted drain-gate contact, regarding their application in a rectifying circuit. For this purpose, we fabricated both diode structures using the organic semiconductor pentacene. dc measurements were performed showing a space-charge-limited current mobility of more than 0.1 cm~2/V s for the vertical diode and a field effect mobility of 0.8 cm~2/V s for the OTFT with shorted source-drain. High-frequency measurements of those diode structures in a rectifier configuration show that both types of diodes are able to follow the base-carrier frequency of 13.56 MHz which is essential for viable radio-frequency-identification (rf-ID) tags. Based on those results we evaluate the performance limits and advantages of each diode configuration regarding their application in an organic rf-ID tag.
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机译：在本文中，我们比较了两种不同的有机二极管结构（垂直二极管和漏栅接触短路的有机场效应晶体管（OTFT））在整流电路中的应用的直流电（dc）和高频性能。为此，我们使用有机半导体并五苯制造了两种二极管结构。进行的dc测量显示，垂直二极管的空间电荷限制电流迁移率大于0.1 cm〜2 / V s，而对于源极短路的OTFT，场效应迁移率则为0.8 cm〜2 / V s。在整流器配置中对这些二极管结构的高频测量表明，两种类型的二极管都能够遵循13.56 MHz的基本载波频率，这对于可行的射频识别（rf-ID）标签至关重要。基于这些结果，我们评估了每种二极管配置在有机rf-ID标签中的性能极限和优势。
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