...
首页> 外文期刊>Journal of Applied Physics >Imaging of ferroelectric films under an applied electric field by scanning electron microscopy
【24h】

Imaging of ferroelectric films under an applied electric field by scanning electron microscopy

机译:扫描电镜在外加电场下铁电薄膜成像

获取原文
获取原文并翻译 | 示例

摘要

We report on scanning electron microscopy (SEM) measurements under external electric fields as a tool for studying electric-field-induced processes in ferroelectric thin films. Epitaxial films of BaTiO_3, grown by metal-organic chemical-vapor deposition on MgO substrates, served as samples in this research. Electric fields of up to 6 MV/m were applied to interdigital electrodes having 5 μm blank intervals between metallic strips deposited on the top of the films. In situ SEM measurements under applied electric fields revealed time-dependent variations in contrast, attributed to domain rearrangements. The results obtained are analyzed in terms of nucleation and growth of energetically favorable domains. The critical electric field of about 10 MV/m for the 90°-domain flips deduced from these measurements is in agreement with previously published data.
机译:我们报告在外部电场下的扫描电子显微镜(SEM)测量,作为研究铁电薄膜中电场感应过程的工具。通过在MgO衬底上进行金属有机化学气相沉积而生长的BaTiO_3外延膜作为本研究的样品。将最高6 MV / m的电场施加到叉指电极上,该叉指电极在沉积在薄膜顶部的金属条之间的空白间隔为5μm。在施加电场的情况下进行原位SEM测量,结果显示了与时间有关的变化,这归因于域重排。从获得能量的有利区域的成核和生长方面分析了获得的结果。由这些测量结果得出的90°域翻转的临界电场约为10 MV / m,与先前发表的数据一致。

著录项

  • 来源
    《Journal of Applied Physics 》 |2006年第4期| p.044106.1-044106.6| 共6页
  • 作者

    U. Lev; E. Zolotoyabko;

  • 作者单位

    Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学 ; 计量学 ;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号