Structural properties of Ge nanocrystals embedded in sapphire

摘要

Isotopically pure ~(74)Ge nanocrystals were formed in a sapphire matrix by the ion beam synthesis method. In contrast to those embedded in amorphous silica, sapphire-embedded nanocrystals are clearly faceted and are preferentially oriented with respect to the crystalline matrix. In situ transmission electron microscopy of heated samples reveals that the nanocrystals melt at 955 ± 15℃, very near to the bulk Ge melting point. The Raman spectra indicate that the sapphire-embedded Ge nanocrystals are under compressive stress in the range of 3-4 GPa. The magnitude of the stress is consistent with that expected for hydrostatic pressure arising from solidification. Stress relaxation was not observed for sapphire-embedded Ge nanocrystals; this is attributed to the slow self-diffusion rate of the alumina matrix atoms at temperatures below the nanocrystal melting point.