Uniformity assessment of key characteristics of quantum-dot infrared detectors: A prerequisite for focal plane arrays

摘要

We have studied some key characteristics of individual InAs/GaAs quantum-dot infrared photodetectors in a linear array to assess their suitability for imaging applications. The dark current-voltage characteristics of the devices in the array are almost identical. Furthermore, the low-temperature (78 K) photoresponse spectra are nearly identical for all devices. The average peak responsivity was about 1.03 A/W, while the average peak detectivity was about 2.16 X 10~9 cm Hz~(1/2)/W. The standard deviations of these two metrics and those of other important parameters were relatively small. Uniformity of individual device characteristics over large arrays is an important prerequisite for high-quality imaging arrays.