Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers

摘要

Stress in the epitaxial films of GaN on Si is reduced by using SiC as intermediate layers. The crystalline films of cubic SiC (0-1 μm), thin AlN (50 nm), and GaN (1-3 μm) were prepared on 3 in. (111) Si substrates—stacked in the order of GaN/AlN/SiC/Si—by metalorganic vapor-phase epitaxy. It is revealed by Raman spectroscopy that the tensile stress in GaN is reduced to half (reduction of about 300 MPa) for GaN on Si with SiC intermediate layers compared with GaN on Si without SiC intermediate layers. Because of stress reduction, crack-free GaN on Si with a thickness of 2 μm was obtained by using SiC intermediate layers. Cracking was minimized even on thicker GaN on Si (3 μm thick) with SiC intermediate layers. The SiC intermediate layers are promising for the realization of nitride based electronic devices on Si.