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Thermoelectric properties of rare earth-ruthenium-germanium compounds

机译:稀土-钌-锗化合物的热电性能

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摘要

We report our studies of the thermoelectric properties of a class of compounds of composition R_3Ru_4Ge_(13) (R=Y, Dy, Ho, and Lu). Magnetization measurements show that the R ion is in the trivalent state in each of these compounds. Each of these compounds displays a semiconductorlike rise in electrical resistivity with decreasing temperature. The magnitude of the resistivity is much larger than typical metals and is similar to that of a heavily doped semiconductor or semimetal. The Seebeck coefficient is positive throughout the temperature range of 2-800 K with room temperature values of approximately 40 μV K~(-1). The lattice thermal conductivity is remarkably low and exhibits a very flat temperature dependence. This is consistent with the observed internal disorder associated with the cagelike structure of these compounds. Cobalt substitution for ruthenium enhances the semiconductor character but does not improve the thermoelectric properties.
机译:我们报告了我们对一类组成为R_3Ru_4Ge_(13)(R = Y,Dy,Ho和Lu)的化合物的热电性质的研究。磁化测量表明,在这些化合物的每一种中,R离子均处于三价状态。这些化合物中的每一种都随着温度降低显示出类似半导体的电阻率上升。电阻率的大小比典型金属大得多,并且与重掺杂半导体或半金属的大小相似。塞贝克系数在2-800 K的整个温度范围内为正,室温值约为40μVK〜(-1)。晶格热导率非常低,并且表现出非常平坦的温度依赖性。这与观察到的与这些化合物的笼状结构有关的内部病症一致。用钴代替钌可以增强半导体性能,但不能改善热电性能。

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