Stability of 3C-SiC surfaces under diamond growth conditions

摘要

The present study deals with the interaction of C-terminated c(2 X 2) and Si-rich 3 X 2 3C-SiC (100) reconstructed surfaces with a microwave plasma chemical vapor deposition used for diamond growth. Pure hydrogen and hydrogen/methane exposures have been carried out. Their effects on the atomic ordering and the stoichiometry within the first planes have been studied in situ using low energy electron diffraction and electron spectroscopies: x-ray photoelectron spectroscopy, x-ray Auger electron spectroscopy, and ultraviolet photoelectron spectroscopy. 5 min plasma exposures result in a lost of the initial reconstructions, a postplasma oxygen contamination, and strong modifications of the stoichiometry within the first planes. Indeed, the stability of well defined 3C-SiC surfaces depends strongly on their termination: C-terminated surface exhibits a high inertia while the Si-rich surface undergoes partial etching. The three first silicon atomic planes involved in the 3 X 2 reconstruction are removed upon pure hydrogen plasma while a monolayer is preserved after hydrogen/methane exposure.