In situ study of the initial stages of diamond deposition on 3C-SiC (100) surfaces: Towards the mechanisms of diamond nucleation

摘要

The mechanisms involved in the diamond nucleation on 3C-SiC surfaces have been investigated using a sequential in situ approach using electron spectroscopies (XPS, XAES and ELS). Moreover, diamond crystals have been studied by HRSEM. The in situ nucleation treatment allows a high diamond nucleation density close to 4 x 10(10) cm(-2). During the in situ enhanced nucleation treatment under Plasma, a negative bias was applied to the sample. The formation of an amorphous carbon phase and the roughening of the 3C-SiC surface have been observed. The part of these competing mechanisms in diamond nucleation is discussed.