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Surface Recombination In Zno Nanorods Grown By Chemical Bath Deposition

机译:化学浴沉积生长的Zno纳米棒的表面复合

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摘要

Vertically well-aligned ZnO nanorods on Si substrates were prepared by a two-step chemical bath deposition (CBD) method. The optical properties of the grown ZnO nanorods were investigated by time resolved photoluminescence spectroscopy. It was found that the effective decay time of the near bandgap recombination in the CBD grown ZnO nanorods strongly depends on the diameter of the ZnO nanorods. Typically, the decay curves obtained from these ZnO nanorods show a combination of two exponential decays. The experimental results show that the fast exponential decay is related to the surface recombination and the slow decay is related to the "bulk" decay. The measured decay time of the effective surface recombination decreases with decreasing diameter, while the bulk decay time remains unchanged. The results also show that an annealing treatment around 500 ℃ significantly reduces the surface recombination rate. A simple carrier and exciton diffusion equation is also used to determine the surface recombination velocity, which results in a value between 1.5 and 4.5 nm/ps.
机译:通过两步化学浴沉积(CBD)方法在Si基板上制备垂直排列良好的ZnO纳米棒。通过时间分辨光致发光光谱法研究了生长的ZnO纳米棒的光学性质。发现在CBD生长的ZnO纳米棒中近带隙重组的有效衰减时间强烈地取决于ZnO纳米棒的直径。通常,从这些ZnO纳米棒获得的衰减曲线显示出两个指数衰减的组合。实验结果表明,快速指数衰减与表面重组有关,而慢速衰减与“本体”衰减有关。测得的有效表面重组的衰减时间随直径的减小而减小,而整体衰减时间保持​​不变。结果还表明,500℃左右的退火处理显着降低了表面复合率。还使用一个简单的载流子和激子扩散方程式来确定表面复合速度,其值介于1.5和4.5 nm / ps之间。

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