Erratum: 'insight Into Electronic Mechanisms Of Nanosecond-laser Ablation Of Silicon' [j. Appl. Phys. 103, 094902 (2008)]

摘要

In Sec. III (B), a confusion occurred with using the symbol "e" to indicate the elementary (positive, |e|) and electron (negative, e) charges. Being correct as a whole, Eq. (9) should read as J_e = -en_eμ_eE-eD_e▽n_e, J_h = |e|n_hμ_hE-|e|D_h▽n_h, (9)rnwhere J_e=en_eV_e and J_h=|e|n_hV_h, V_e and V_h are the electron and hole velocities respectively, and the diffusion coefficients are calculated as D_e=kT_eμ_e/|e| and D_e=kT_eμ_e/|e| . In Eqs. (11)-(13), the elementary charge |e| should be used instead of the electron charge e. Importantly, in the simulations the correct expressions were used and the results presented in the original paper are not affected.