Mask pattern interference in AIGalnAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

摘要

We studied selective area growth modeling and characterization of the AIGalnAs material system. We used a three-dimensional vapor phase diffusion model to extract the effective diffusion lengths of Al, Ga, and In species from measured thickness profiles of the three binaries AlAs, GaAs, and InP. Our growth conditions yield to 50, 85, and 10 μm for Al, Ga, and In, respectively. Based on these values, we achieved a precise prediction of AIGalnAs thickness, composition, band gap, and biaxial strain variations in different selective area growth conditions. Particular attention was paid to the influence of neighboring cells in the case of high mask density. This configuration occurs in practical component mask layout. High mask density leads to interferences between masked cells and enhances the effect of the long diffusion length of aluminum and gallium species. Then, the biaxial strain is tensile shifted and the band gap is blue shifted in the vicinity of a mask, compared to reference material features grown away from the mask. High-resolution micro-photoluminescence and optical interferometer microscopy measurements confirmed the validity of simulated band gap and thickness variations for both bulk and multi-quantum well layers.