Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

摘要

The isomorphic oxide-on-oxide epitaxy of Y_2O_3 on cubic Pr_2O_3(111)/Si(111) support systems was studied to tailor the lattice constant of the dielectric heterostructure for future integration of functional semiconductors via heteroepitaxy on the Si mate