首页> 外文期刊>Journal of Applied Physics >Thermal resistance of the native interface between vertically aligned multiwalled carbon nanotube arrays and their SiO_2/Si substrate
【24h】

Thermal resistance of the native interface between vertically aligned multiwalled carbon nanotube arrays and their SiO_2/Si substrate

机译:垂直排列的多壁碳纳米管阵列与其SiO_2 / Si基底之间的固有界面的热阻

获取原文
获取原文并翻译 | 示例
           

摘要

The interface thermal resistance (ITR) of the native interface between vertically aligned multiwalled carbon nanotube arrays and the SiO_2/Si substrate was investigated. Experimental results obtained by a photothermoelectric technique are compared with theoretical predictions for the ITR across nanoconstrictions. The model considers classical constriction effects and contributions due to diffuse mismatch thermal resistance. Experimental values of the ITR are much larger than the model predictions. The observed discrepancy may be due to the imperfect mechanical contact between the tubes and substrate or additional contributions to the ITR due to the presence of a catalyst layer at the interface.
机译:研究了垂直排列的多壁碳纳米管阵列与SiO_2 / Si衬底之间的固有界面的界面热阻(ITR)。将通过光热电技术获得的实验结果与跨纳米收缩的ITR的理论预测进行了比较。该模型考虑了由于扩散失配热阻而产生的经典收缩效应和贡献。 ITR的实验值比模型预测值大得多。观察到的差异可能是由于管和基材之间的机械接触不完善,或者是由于界面处存在催化剂层而导致的对ITR的额外贡献。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号