机译:非易失性Cu / ZnO / Cu / ZnO / Pt电阻存储器中退火处理引起的转换机制转变:从载流子俘获/去俘获到电化学金属化
Department of Materials Science and Engineering, Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, People's Republic of China;
rnDepartment of Materials Science and Engineering, Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, People's Republic of China;
rnDepartment of Materials Science and Engineering, Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, People's Republic of China;
rnLaboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China;
机译:Al / VOx / Cu RRAM中的电化学金属化和抗陷/去陷电阻切换机制
机译:基于Ga和Sn共掺杂ZnO薄膜的非易失性存储器件的电阻开关特性和导电机理
机译:ZnO / ZrO_2堆叠的电阻型随机存取存储器件通过溶胶-凝胶法在无成形操作下于300℃退火的电阻切换机制
机译:Cu / Ni:ZnO / Inga Schottky二极管中的捕获/脱氮诱导的负差分电阻
机译:金属/ pr钙锰矿界面中的电场感应电阻切换:未来非易失性存储设备的模型。
机译:更改两层厚度:i-ZnO纳米棒p-Cu2O及其对p-Cu2O / i-ZnO纳米棒/ n-IGZO异质结的载流子传输机制的影响
机译:改变两层厚度:i-ZnO纳米棒,p-Cu2O及其对p-Cu2O / i-ZnO纳米棒/ n-IGZO异质结的载流子传输机制的影响