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Platinum Schottky contacts on single-crystal ZnO with hydrogen peroxide treatment

机译:采用过氧化氢处理的单晶ZnO上的铂肖特基接触

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摘要

Platinum (Pt) Schottky contacts (SCs) on hydrothermal grown Zn-terminated (0001) ZnO substrates with the different hydrogen peroxide (H_2O_2) treatment time are investigated. Under the treatment in room temperature, effective SCs are made for 45 min and longer time and the electrical characteristics show the dependence on treatment time. The irregular humps on ZnO surface with roughness measured by atomic force microscope differ as the treatment time and roughness exhibits the large variation between 0.368 and 3.566 nm, indicating the etching effect and near-surface defects related to the lattice imperfections. The evaluated barrier height has the value at 0.89-0.96 eV with the saturation current density in the range of 2.21 × 10~(-10)-3.31 × 10~(-9) A/cm~2. The effective donor concentration calculated from capacitance-voltage (C-V) measurement decreases as treatment time, implying the widening of the space charge region after H_2O_2 treatment. The improved SC characteristics are attributed to the product of the wider bandgap and low-conductivity ZnO_2 via grazing-incidence x-ray diffraction analysis. The rectifying behavior has the threshold dependence on the treatment time and has the reverse trend toward the surface asperities.
机译:研究了在水热生长的Zn-终止的(0001)ZnO衬底上采用不同的过氧化氢(H_2O_2)处理时间的铂(Pt)肖特基接触(SCs)。在室温下处理时,有效的SC可以持续45分钟或更长时间,并且电特性显示出其对处理时间的依赖性。用原子力显微镜测量的具有粗糙度的ZnO表面上的不规则驼峰随处理时间的不同而不同,粗糙度在0.368和3.566 nm之间表现出较大的变化,表明蚀刻效果和与晶格缺陷有关的近表面缺陷。评估的势垒高度的值为0.89-0.96 eV,饱和电流密度为2.21×10〜(-10)-3.31×10〜(-9)A / cm〜2。由电容-电压(C-V)测量得出的有效施主浓度随处理时间的延长而降低,这意味着H_2O_2处理后空间电荷区域变宽。通过掠入射x射线衍射分析,改善的SC特性归因于宽带隙和低电导率ZnO_2的乘积。整流行为具有取决于处理时间的阈值,并且具有朝向表面粗糙的相反趋势。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第9期|093702.1-093702.6|共6页
  • 作者单位

    Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan;

    Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan;

    Department of Mechanical Engineering, National Cheng-Kung University, Tainan 701, Taiwan;

    Department of Electrical Engineering, Nan Jeon Institute of Technology, Tainan 737, Taiwan;

    Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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