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Field induced resistivity anisotropy in SrRuO_3 films

机译:SrRuO_3薄膜中的场致电阻率各向异性

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摘要

SrRuO_3 is an itinerant ferromagnet with orthorhombic structure and uniaxial magnetocrystalline anisotropy-features expected to yield resistivity anisotropy. Here we explore changes in the resistivity anisotropy of epitaxial SrRuO_3 films due to induced magnetization in the paramagnetic state by using the planar Hall effect. We find that the effect of the induced magnetization on the in-plane anisotropy is strongly angular dependent, and we provide a full description of this behavior at 160 K for induced magnetization in the (001) plane.
机译:SrRuO_3是具有正交结构和单轴磁晶各向异性特征的流动铁磁体,有望产生电阻率各向异性。在这里,我们利用平面霍尔效应研究了由于顺磁状态下的感应磁化而引起的外延SrRuO_3薄膜的电阻率各向异性的变化。我们发现感应磁化对平面内各向异性的影响与角度密切相关,并且我们对(001)平面中感应磁化在160 K下的行为提供了完整描述。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第2期|497-499|共3页
  • 作者单位

    Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Han University, Ramat-Gan 52900, Israel;

    Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Han University, Ramat-Gan 52900, Israel;

    Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8284, USA;

    Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Han University, Ramat-Gan 52900, Israel;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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