Magneto-resistive RAM cell, has metal-bit line supplying external magnetic field to magneto-resistive RAM-cell stack, where effective anisotropy-field and magnetic field form non-zero-angle relative to each other

摘要

The cell (200) has a magneto-resistive RAM-cell stack (202) providing an effective anisotropy-field of a memory layer of the stack during thermally-selected heating. A metal-bit line (210) supplies an external magnetic field to the stack, where the effective anisotropy-field and the external magnetic field form a non-zero-angle relative to each other. The effective anisotropy-field is a form-anisotropy-field and an intrinsic-anisotropy-field, and is parallel to an axial direction of the stack. Independent claims are also included for the following: (1) a method of programming magneto-resistive memory cells (2) a method of reading a magneto-resistive memory cell.