Electroluminescence from p-i-n structure fabricated using crystalline silicon on glass technology

摘要

Strong electroluminescence was detected at room temperature from a p-i-n structure fabricated using crystalline silicon on glass technology. The luminescence spectra at small to moderate carrier injection levels contains strong peak with maximum at energy position E_(ph)～0.8 eV. Additionally, a broad emission band in the range of energies 1 eV ＜ E_(ph) ＜ 1.16 eV appears at high injection levels. Obtained results suggest that the low energy peak can be attributed to dislocation related luminescence (DRL), while at least part of the high-energy emission band should be attributed to band-to-band transitions. A shift in the DRL peak position by the electric field present in the structure was observed. The shift is related to strong Stark effect. The relatively high efficiency of room temperature luminescence suggests the possibility for application of the structure for all-silicon light emitter.