首页> 外文期刊>Journal of Applied Physics >Origin Of Ultralow Permittivity In Polyimide/mesoporous Silicate Nanohybrid Films With High Resistivity And High Breakdown Strength
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Origin Of Ultralow Permittivity In Polyimide/mesoporous Silicate Nanohybrid Films With High Resistivity And High Breakdown Strength

机译:高电阻率和高击穿强度的聚酰亚胺/介孔硅酸盐纳米杂化薄膜中超低介电常数的起源

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摘要

Ultralow dielectric permittivity (k=2.58) nanohybrid dielectric film was obtained by dispersing 3.0 wt % mesoporous silicate (MCM-41) particles with nanosize hollow channels into polyimide (PI) polymer. The ultralow k value of the hybrid film can be mainly attributed to the low k value of MCM-41 itself and the small air gaps in the hybrid films. High volume resistivity and high breakdown strength were also observed for those films. At high concentration of MCM-41 loading (>3.0 wt %), the k values of the films increased significantly due to the contribution of strong interfacial polarization and interaction among MCM-41 particles. The ultralow k feature of the PI/MCM-41 nanohybrid films was explained well by Maxwell-Garnett and Bruggeman equations. The PI/MCM-41 nanohybrid film with good thermal stability as well as excellent dielectric properties can be considered as good candidate for advanced dielectric materials.
机译:通过将具有纳米尺寸的中空通道的3.0 wt%介孔硅酸盐(MCM-41)颗粒分散到聚酰亚胺(PI)聚合物中,可获得超低介电常数(k = 2.58)纳米杂化介电膜。杂化膜的超低k值主要归因于MCM-41本身的低k值和杂化膜中的小气隙。这些膜还观察到高体积电阻率和高击穿强度。在高浓度的MCM-41负载(> 3.0 wt%)下,由于强界面极化和MCM-41颗粒之间的相互作用,薄膜的k值显着增加。 Maxwell-Garnett和Bruggeman方程很好地解释了PI / MCM-41纳米杂化膜的超低k特性。具有良好的热稳定性以及优异的介电性能的PI / MCM-41纳米杂化膜可以被认为是先进介电材料的良好选择。

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