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首页> 外文期刊>Journal of Applied Physics >Volatile Electrical Switching In A Functional Polyimide Containing Electron-donor And -acceptor Moieties
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Volatile Electrical Switching In A Functional Polyimide Containing Electron-donor And -acceptor Moieties

机译:含电子给体和受体部分的功能性聚酰亚胺中的挥发性电开关

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A solution-processable functional polyimide (PYTPA-PI), containing triphenylamine-substituted diphenylpyridine moieties (PYTPA, electron donors) and phthalimide moieties (PI, electron acceptors), was synthesized. The copolymer exhibits a high glass transition temperature of 342℃. A switching device, based on a solution-cast thin film of PYTPA-PI sandwiched between an indium-tin oxide (ITO) bottom electrode and an Al top electrode, exhibits two accessible conductivity states and can be switched from the low-conductivity (OFF) state to the high-conductivity (ON) state, with an ON/OFF current ratio of more than 10~3, at the threshold voltage of about 2.7 V. The ON state is volatile and relaxes readily to the OFF state. However, it can be electrically sustained by a refreshing voltage pulse of 2 V. The ON state can also be reset to the initial OFF state by a reverse bias of -0.9 V. The ability to write, erase, read, and refresh the electrical states fulfills the functionality of a dynamic random access memory. The electronic transitions and transport mechanisms associated with the memory effect were elucidated from molecular simulation. In comparison with that of other functional polyimides, the electrical switching performance in PYTPA-PI illustrates the possibility of tuning memory properties in imide polymers via molecular design and synthesis.
机译:合成了包含三苯胺取代的二苯基吡啶部分(PYTPA,电子给体)和邻苯二甲酰亚胺部分(PI,电子受体)的可溶液加工的功能性聚酰亚胺(PYTPA-PI)。该共聚物具有342℃的高玻璃化转变温度。开关设备基于PYTPA-PI的溶液流延薄膜,夹在铟锡氧化物(ITO)底部电极和Al顶部电极之间,具有两个可访问的电导率状态,并且可以从低电导率(OFF在大约2.7 V的阈值电压下,处于大于10〜3的ON / OFF电流比的高电导(ON)状态.ON状态易挥发且容易松弛到OFF状态。但是,它可以通过2 V的刷新电压脉冲在电气上维持。也可以通过-0.9 V的反向偏置将ON状态重置为初始OFF状态。具有写入,擦除,读取和刷新电气功能的能力状态实现了动态随机存取存储器的功能。通过分子模拟阐明了与记忆效应相关的电子跃迁和传输机制。与其他功能性聚酰亚胺相比,PYTPA-PI的电开关性能说明了通过分子设计和合成来调节酰亚胺聚合物中存储性能的可能性。

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