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Bandgap shift in SnO_2 nanostructures induced by lattice strain and coordination imperfection

机译:晶格应变和配位缺陷引起的SnO_2纳米结构的带隙位移

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摘要

We have established an analytical model to address the bandgap shift in SnO_2 nanostructures in self-equilibrium state on the basis of bond length and bond energy correlations. Based on these analyses of the relationship among the bonding identities, single bond energy, and bandgap shifts derived from the energy perturbation, we found that the deformation potentials relationship of SnO_2 nanodots and nanowires are different, while both bandgap energies exhibit a pronounced blueshift as comparable to those of the bulk counterparts. This bandgap shift is attributed to the lattice strain and coordination imperfection in the surfaces of nanostructures.
机译:我们建立了一个分析模型,以解决基于键长和键能相关性的SnO_2纳米结构在自平衡状态下的带隙位移。通过对键合身份,单键能和由能量扰动产生的带隙位移之间的关系进行分析,我们发现SnO_2纳米点和纳米线的形变势关系不同,而两个带隙能均表现出明显的蓝移。与大部分同类产品相比。带隙位移归因于纳米结构表面的晶格应变和配位缺陷。

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  • 来源
    《Journal of Applied Physics》 |2010年第8期|p.083511.1-083511.4|共4页
  • 作者单位

    Department of Physics, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of the Ministry of Education, Hunan Normal University, Changsha, 410081 Hunan, People's Republic of China;

    rnDepartment of Physics, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of the Ministry of Education, Hunan Normal University, Changsha, 410081 Hunan, People's Republic of China,School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798;

    rnSchool of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University, Guangzhou, 510275 Guangdong, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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