机译:晶格应变和配位缺陷引起的SnO_2纳米结构的带隙位移
Department of Physics, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of the Ministry of Education, Hunan Normal University, Changsha, 410081 Hunan, People's Republic of China;
rnDepartment of Physics, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of the Ministry of Education, Hunan Normal University, Changsha, 410081 Hunan, People's Republic of China,School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798;
rnSchool of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University, Guangzhou, 510275 Guangdong, People's Republic of China;
机译:在NP型Laalo3 / Srtio3(110)超晶格中应变诱导的间接到直接的带隙转变
机译:SnO_2纳米纤维的粒度依赖性带隙位移
机译:应变对相称双层石墨烯超晶格的影响:扭曲的三角形翘曲,带隙的出现和直接间接带隙转变
机译:过程诱导的锗纳米结构应变带隙减小
机译:镧系离子在八面体配位中的发光与质心位移和宿主晶格激子能量的比较
机译:通过应变工程在具有大晶格失配的核/壳纳米线中实现可广泛调谐的GaAs带隙
机译:应变工程:尖端诱导的纳米工程菌株,带隙和2D半导体中的激子漏斗(ADV。MART。17/2021)