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Fabrication and optical properties of Ce-doped ZnO nanorods

机译:Ce掺杂ZnO纳米棒的制备及光学性质

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摘要

Ce-doped ZnO nanorods were prepared under mild hydrothermal condition. The microstructures, morphologies and optical properties of as-synthesized nanorods were investigated by x-ray diffraction (XRD), transmission electron microscope (TEM), x-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), and Raman spectroscopy. XRD and XPS results demonstrated that Ce ions were successfully incorporated into the lattice position of Zn ions in ZnO. TEM images illustrated that the average diameter of Ce-doped ZnO nanorods was 8 nm. PL measurements revealed that both the undoped and Ce-doped ZnO nanorods had an UV emission and a defect emission and the Ce ions doping induced a redshift in the UV emission and a small enhancement in the defect emission. The slight shift in A_(1L) and E_(1L) in Raman spectra increased with the Ce ions doping also indicated that the Ce doping changed the free carrier concentration in the ZnO nanorods.
机译:在温和的水热条件下制备了Ce掺杂的ZnO纳米棒。通过x射线衍射(XRD),透射电子显微镜(TEM),x射线光电子能谱(XPS),光致发光光谱(PL)和拉曼光谱研究了合成纳米棒的微观结构,形貌和光学性质。 XRD和XPS结果表明Ce离子已成功掺入ZnO中Zn离子的晶格位置。 TEM图像表明Ce掺杂的ZnO纳米棒的平均直径为8 nm。 PL测量显示,未掺杂和Ce掺杂的ZnO纳米棒均具有UV发射和缺陷发射,并且Ce离子掺杂引起UV发射红移和缺陷发射的少量增强。随着Ce离子掺杂量的增加,拉曼光谱中A_(1L)和E_(1L)的轻微变化也表明Ce掺杂改变了ZnO纳米棒中的自由载流子浓度。

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  • 来源
    《Journal of Applied Physics》 |2010年第7期|p.074302.1-074302.4|共4页
  • 作者单位

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China;

    School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China Key Laboratory of Excited State Physics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Eastern Nan-Hu Road, Changchun 130033, People's Republic of China;

    Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China Key Laboratory of Excited State Physics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Eastern Nan-Hu Road, Changchun 130033, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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