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Flexible micromorph tandem a-Si/μc-Si solar cells

机译:柔性微晶串联a-Si /μc-Si太阳能电池

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摘要

The deposition of a stack of amorphous (a-Si:H) and microcrystalline (μc-Si:H) tandem thin film silicon solar cells (micromorph) requires at least twice the time used for a single junction a-Si:H cell. However, micromorph devices have a higher potential efficiency, thanks to the broader absorption spectrum of μc-Si: H material. High efficiencies can only be achieved by mitigating the nanocracks in the μc-Si:H cell and the light-induced degradation of the a-Si:H cell. As a result, μc-Si:H cell has to grow on a smooth substrate with large periodicity (>1 μm) and the a-Si:H cell on sharp pyramids with smaller feature size (~350 nm) to strongly scatter the light in the weak absorption spectra of a-Si:H material. The asymmetric intermediate reflector introduced in this work uncouples the growth and light scattering issues of the tandem micromorph solar cells. The stabilized efficiency of the tandem n-i-p-i-p micromorph is increased by a relative 15% compared to a cell without AIR and 32% in relative compared to an a-Si:H single junction solar cells. The overall process (T< 200 ℃) is kept compatible with low cost plastic substrates. The best stabilized efficiency of a cell deposited on polyethylene-naphthalate plastic substrate is 9.8% after 1000 h of light soaking at V_(oc), 1 sun, and 50 ℃.
机译:非晶(a-Si:H)和微晶(μc-Si:H)串联薄膜硅太阳能电池(微晶)的堆叠需要至少两倍于单结a-Si:H电池的时间。然而,由于μc-Si:H材料具有更宽的吸收光谱,微晶器件具有更高的潜在效率。仅通过减轻μc-Si:H电池中的纳米裂纹和a-Si:H电池的光诱导降解,才能实现高效率。结果,μc-Si:H电池必须在具有较大周期性(> 1μm)的光滑基板上生长,而a-Si:H电池必须在特征尺寸较小(〜350 nm)的尖锐金字塔上生长,以强烈散射光在a-Si:H材料的弱吸收光谱中。在这项工作中引入的非对称中间反射器解耦了串联微晶太阳能电池的生长和光散射问题。与没有AIR的电池相比,串联n-i-p / n-i-p微晶的稳定效率提高了约15%,与a-Si:H单结太阳能电池相比,提高了32%。整个过程(T <200℃)保持与低成本塑料基板兼容。在V_(oc),1个太阳和50℃下浸泡1000小时后,沉积在聚萘二甲酸乙二醇酯塑料基板上的电池的最佳稳定化效率为9.8%。

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  • 来源
    《Journal of Applied Physics》 |2010年第1期|014507.1-014507.7|共7页
  • 作者单位

    Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Federate de Lausanne (EPFL), Rue A.-L. Breguet 2, CH-2000 Neuchatel, Switzerland;

    Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Federate de Lausanne (EPFL), Rue A.-L. Breguet 2, CH-2000 Neuchatel, Switzerland;

    Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Federate de Lausanne (EPFL), Rue A.-L. Breguet 2, CH-2000 Neuchatel, Switzerland;

    Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Federate de Lausanne (EPFL), Rue A.-L. Breguet 2, CH-2000 Neuchatel, Switzerland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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