Publisher's Note: 'Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO_x transition layer of TiN/SiO_2/FeO_x/Fe structure' [J. Appl. Phys. 110,053703 (2011)]

Yao-Feng Chang; Ting-Chang Chang; Chun-Yen Chang

首页> 外文期刊>Journal of Applied Physics >Publisher's Note: 'Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO_x transition layer of TiN/SiO_2/FeO_x/Fe structure' [J. Appl. Phys. 110,053703 (2011)]

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Publisher's Note: 'Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO_x transition layer of TiN/SiO_2/FeO_x/Fe structure' [J. Appl. Phys. 110,053703 (2011)]

机译：出版者注：“双极多级忆阻机理的研究统计及其在TiN / SiO_2 / FeO_x / Fe结构的薄FeO_x过渡层中的表征” [J.应用物理110,053703（2011）]

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This article was originally published online on 1 September 2011 with incorrect country names. AIP apologizes for these errors. All online versions of the article were corrected on 31 October 2011.

机译：本文最初于2011年9月1日在线发布，带有不正确的国家/地区名称。对于这些错误，AIP表示歉意。本文的所有在线版本均已在2011年10月31日得到更正。

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来源
《Journal of Applied Physics》 |2011年第11期|p.119904.1|共1页
作者
Yao-Feng Chang; Ting-Chang Chang; Chun-Yen Chang;
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作者单位

Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan;

Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan,Centerfor Nanoscience & Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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入库时间 2022-08-18 03:10:59

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1. Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO_x transition layer of TiN/SiO_2/FeO_x/Fe structure [J] . Yao-Feng Chang, Ting-Chang Chang, Chun-Yen Chang Journal of Applied Physics . 2011,第V110N5期

机译：TiN / SiO_2 / FeO_x / Fe结构的薄FeO_x过渡层中双极多级忆阻机理的研究统计和表征
2. Improvement of resistance switching characteristics in a thin FeO_x transition layer of TiN/SiO_2/FeO_x/FePt structure by rapid annealing [J] . Li-Wei Feng, Chun-Yen Chang, Yao-Feng Chang, Applied Physicsletters . 2010,第22期

机译：通过快速退火改善TiN / SiO_2 / FeO_x / FePt结构的薄FeO_x过渡层中的电阻切换特性
3. Publisher's Note: "Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure" [J. Appl. Phys. 109,124311 (2011)] [J] . K. Cui, B. J. Robinson, D. A. Thompson, Journal of Applied Physics . 2011,第6期

机译：出版者注：“层分离，InAs厚度和快速热退火对多层量子线结构的光发射的影响” [J.应用物理109,124311（2011）]
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Publisher's Note: 'Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO_x transition layer of TiN/SiO_2/FeO_x/Fe structure' [J. Appl. Phys. 110,053703 (2011)]

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