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机译:表面电导对Si / SiGe异质结构中横向门控量子器件的影响
Department of Physics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA;
Department of Physics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA;
Department of Physics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA;
Department of Materials Science and Engineering,University of California at Los Angeles,Los Angeles,California 90095,USA;
Department of Physics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA;
Department of Physics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA;
Department of Materials Science and Engineering,University of California at Los Angeles,Los Angeles,California 90095,USA;
Department of Physics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA;
机译:部分门控双连接GAAS / ALXGA1-XAS异质结构设备中的双普通,积分量子和分数量子霍尔效应
机译:通过实现双面调制掺杂来增强SiGe异质结构的Ge量子阱中的空穴电导
机译:通过肖特基分裂栅技术实现Si / SiGe中的横向量子点
机译:表面门控INAC / AIINSB量子孔的一维电导异质结构
机译:追求量子硬件:Si / SiGe异质结构中的栅极定义量子点的研究
机译:在单个制造步骤中生成自对准SiO2 / Ge / SiO2 / SiGe栅堆叠异质结构的独特方法
机译:1表面电导对si / siGe异质结构中侧向栅控量子器件的影响