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首页> 外文期刊>Journal of Applied Physics >The interface structure and magnetic and electronic properties of a Co-2FeAl0.5Si0.5/MgO/Co-2FeAl0.5Si-0.5 magnetic tunneling junction
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The interface structure and magnetic and electronic properties of a Co-2FeAl0.5Si0.5/MgO/Co-2FeAl0.5Si-0.5 magnetic tunneling junction

机译:Co-2FeAl0.5Si0.5 / MgO / Co-2FeAl0.5Si-0.5磁性隧道结的界面结构和磁电子性能

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摘要

Magnetic tunnel junctions (MTJs) consisting of ferromagnet-insulator-ferromagnet sandwiches have attracted significant interest, and the structure of the interfaces in MTJs plays a crucial role in their performance. The interface structure, and magnetic and electronic properties of a Co-2FeAl-0.5Si-0.5/MgO/Co-2FeAl-0.5Si-0.5 MTJ are studied by first-principles calculations. It is found that three interface structures, the Co-, Fe-, and Al-terminated interfaces, are thermally stable. Local density of states calculations show that interface states form at the Fermi level for the Co- and Fe-terminated interfaces, and their half-metallic properties are destroyed. For the Al-terminated interface, half-metallic behavior remains at the interface, and there are no interface states at the Fermi level. This should heavily suppress the spin-flipping and tunneling caused by interface states located at the Fermi level of a Co-2FeAl-0.5Si-0.5/MgO interface,allowing the transport properties of Co-2FeAl0.5Si0.5/MgO/Co-2FeAl-0.5Si-0.5 MTJs to be improved.
机译:由铁磁体-绝缘体-铁磁体三明治组成的磁性隧道结(MTJ)引起了人们的极大兴趣,并且MTJ中的界面结构对其性能起着至关重要的作用。通过第一性原理计算研究了Co-2FeAl-0.5Si-0.5 / MgO / Co-2FeAl-0.5Si-0.5 MTJ的界面结构以及磁性和电子性能。发现三个界面结构,Co-,Fe-和Al-端接的界面是热稳定的。局部状态密度的计算表明,对于以Co和Fe为末端的界面,界面态在费米能级形成,并且它们的半金属性质被破坏。对于铝端接的界面,半金属行为保留在界面上,并且在费米能级不存在界面状态。这将大大抑制由位于Co-2FeAl-0.5Si-0.5 / MgO界面的费米能级的界面态引起的自旋翻转和隧穿,从而允许Co-2FeAl0.5Si0.5 / MgO / Co-的传输性质2FeAl-0.5Si-0.5 MTJ有待改进。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第1期|p.109.083509.1-109.083509.6|共6页
  • 作者

    H. LYu; G.W.Yang;

  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics & Engineering,Sun Yat-sen University, Guangzhou 510275, Guangdong, China,Jiangsu Laboratory of Advanced Functional Materials, Department of Physics,Changshu Institute of Technology,Changshu 215500, Jiangsu, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics & Engineering,Sun Yat-sen University, Guangzhou 510275, Guangdong, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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