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Experimental feasibility of spin-torque oscillator with synthetic field generation layer for microwave assisted magnetic recording

机译:具有合成场产生层的自旋转矩振荡器在微波辅助磁记录中的实验可行性

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摘要

We investigated the oscillation characteristics of a fabricated spin-torque oscillator (STO) with a synthetic field generation layer (FGL) composed of the FGL and perpendicular anisotropy magnetic layer in microwave assisted magnetic recording (MAMR). The fabricated STO was composed of a perpendicularly magnetized reference layer/interlayer/synthetic-FGL. The STO with synthetic-FGL showed very narrow peaks caused by spin-torque oscillation. We also found oscillating frequency of the fabricated STO increased as the external field increased. This implies that the FGL magnetization rotates out-of-plane. Calculations by micromagnetic simulation were qualitatively consistent with the STO measurements. The calculated magnetization configurations in the synthetic-FGL formed a single domain but the one in the single-FGL formed multiple domains. This is one reason that the synthetic-FGL is estimated to generate a larger ac-field. In sum, we experimentally confirmed the effective oscillation of fabricated STO with a synthetic-FGL even with a thick FGL and its feasibility for high areal density in MAMR.
机译:我们研究了在微波辅助磁记录(MAMR)中具有由FGL和垂直各向异性磁层组成的合成场产生层(FGL)的自旋转矩振荡器(STO)的振荡特性。制成的STO由垂直磁化的参考层/中间层/合成FGL组成。带有合成FGL的STO表现出由自旋扭矩振荡引起的非常窄的峰。我们还发现,制造的STO的振荡频率随外部磁场的增加而增加。这意味着FGL磁化平面外旋转。通过微磁模拟进行的计算在质量上与STO测量一致。在合成FGL中计算出的磁化构型形成一个畴,但在单个FGL中形成一个磁畴。这是估计合成FGL产生较大交流场的原因之一。总而言之,我们通过实验证实了即使是厚的FGL,合成FGL所制造的STO仍能有效振荡,并且在MAMR中具有较高的面密度是可行的。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第2期|p.07B741.1-07B741.3|共3页
  • 作者单位

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

    Central Research Laboratory, Hitachi, Ltd., Odawara, 256-8510, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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