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Surface roughness of MgO thin film and its critical thickness for optimal biaxial texturing by ion-beam-assisted deposition

机译:MgO薄膜的表面粗糙度及其临界厚度,可通过离子束辅助沉积实现最佳双轴织构

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摘要

We investigated the deposition time dependences of the in-plane grain alignment (Ac/)) and the surface roughness (w) of biaxially textured MgO thin films fabricated by ion-beam-assisted deposition (IBAD) and found a strong correlation between them. The time evolution of the surface roughness of IBAD-MgO showed an abrupt increase at the same time corresponding to the beginning of the deterioration in Δφ. The roughness versus thickness profiles obtained under different deposition conditions with different assisting ion-beam currents collapsed to a single curve, even though the deposition rates were significantly different in each condition. This implies that the abrupt increase in roughness occurred at the same thickness-of about 4 nm-irrespective of the deposition rate. The result also indicated that the Δφ deterioration began with the same thickness of about 4 nm. This "critical" thickness of about 4 nm might be related to the completion of the crystallization of the film. Further, deposition beyond the critical thickness, therefore, became merely a homoepitaxial deposition under the "IBAD" condition, which was far from optimal because of the ion bombardment and low temperature (no-heating), and thus Δφ deteriorated. Based on these considerations, we propose an approach to attain a sharp texture in a IBAD-MgO-based biaxial substrate; moreover, we demonstrated this approach using a two-step deposition process.
机译:我们研究了通过离子束辅助沉积(IBAD)制备的双轴织构MgO薄膜的面内晶粒取向(Ac /)和表面粗糙度(w)的沉积时间依赖性,发现它们之间有很强的相关性。 IBAD-MgO的表面粗糙度随时间的变化显示出急剧增加,与此同时,Δφ开始下降。即使在每种条件下沉积速率显着不同,在不同沉积条件下使用不同的辅助离子束电流获得的粗糙度与厚度的关系也塌陷为一条曲线。这意味着在大约4nm的相同厚度下粗糙度的突然增加发生,而与沉积速率无关。结果还表明,Δφ的劣化始于相同的约4nm的厚度。约4nm的“临界”厚度可能与膜的结晶完成有关。此外,超过临界厚度的沉积因此仅在“ IBAD”条件下变为同质外延沉积,由于离子轰击和低温(不加热),这远非最佳,因此Δφ劣化。基于这些考虑,我们提出了一种在基于IBAD-MgO的双轴基板中获得清晰纹理的方法。此外,我们使用两步沉积工艺演示了这种方法。

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  • 来源
    《Journal of Applied Physics》 |2011年第11期|p.113922.1-113922.6|共6页
  • 作者单位

    Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan;

    Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan;

    Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan;

    Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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