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Spin-polarized transport through a two-level quantum dot driven by ac fields

机译:通过交流场驱动的两级量子点的自旋极化传输

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摘要

We study the spin-polarized current and shot noise spectra in a two-level quantum dot driven by ac fields, where the dot is connected to two ferromagnetic leads with parallel alignment. When the spin-resolved interlevel pump is applied, it is demonstrated that a pure spin current can be generated at zero bias voltage. We separately discuss the transport properties in two tunneling regimes, double levels of the quantum dot under the transport windows and dynamical channel blockade regimes. It is found that Fano factor relies sensitively not only on the pump style but also on the corresponding strength. When both levels lie in the transport window, the Fano factor is independent on the charge pump but decreases with the spin pump strength. In the channel blockade case, different combinations of sub- and super-Poissonian Fano factors are shown in various regimes by tuning the pump strength and spin polarization. The results indicate that the shot noise can be used to detect the inner interactions and physical properties in the present device.
机译:我们研究了由交流场驱动的两级量子点中的自旋极化电流和散粒噪声谱,其中该点连接到两个具有平行排列的铁磁引线。证明了使用自旋分辨的级间泵时,可以证明在零偏置电压下可以产生纯自旋电流。我们分别讨论了两种隧穿机制,在传输窗口下的量子点的双能级和动态通道封锁机制下的传输特性。已经发现,法诺系数不仅敏感地取决于泵的样式,而且还取决于相应的强度。当两个水平都位于传输窗口中时,Fano因子与电荷泵无关,但随自旋泵的强度而降低。在通道阻塞的情况下,通过调节泵浦强度和自旋极化,在各种情况下显示了亚泊松和超级泊松法诺因子的不同组合。结果表明散粒噪声可用于检测本装置中的内部相互作用和物理性质。

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  • 来源
    《Journal of Applied Physics》 |2011年第5期|p.582-587|共6页
  • 作者单位

    Department of Applied Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of People's Republic of China, Chengdu 610054,People's Republic of China;

    Department of Applied Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of People's Republic of China, Chengdu 610054,People's Republic of China;

    Department of Applied Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of People's Republic of China, Chengdu 610054,People's Republic of China;

    Department of Applied Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of People's Republic of China, Chengdu 610054,People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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