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Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

机译:用于微制造磁弹性传感器的FeNiMoB薄膜材料的开发

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摘要

Metglas? 2826MB foils of 25-30 μm thickness with the composition of Fe_(40)Ni_(38)Mo_4B_(18) have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ~3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas? 2826MB with a coercivity of less than 40 Am~(-1). The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.
机译:梅特格拉斯?由Fe_(40)Ni_(38)Mo_4B_(18)组成的厚度为25-30μm的2826MB箔已用于多种应用中的磁弹性传感器。这项工作是针对用于集成微系统的〜3μm厚的铁-镍-钼-硼(FeNiMoB)薄膜的研究。通过共溅射铁镍(FeNi),钼(Mo)和硼(B)靶将膜沉积在Si基板上。结果表明,Mo和B的掺杂可以显着改变FeNi材料的微观结构和磁性能。当FeNi仅掺杂Mo时,随着掺杂剂浓度的增加,其晶体结构从多晶变为非晶。过渡点大约在10 at。 Mo含量的%。随着Mo掺杂水平的提高,FeNi的各向异性磁性能也发生了显着变化。掺杂有Mo的FeNi薄膜的矫顽力降低到小于不掺杂的值的三分之一。将FeNi与B一起掺入Mo会大大降低矫顽力值和面外磁各向异性,并且还会极大地改变材料的微观结构。此外,向FeNiMo掺杂B会显着降低材料的剩磁。使用优化工艺制造的薄膜材料在磁性上与非晶态Metglas?一样柔软。 2826MB,矫顽力小于40 Am〜(-1)。这项研究的发现使我们更好地了解了FeNiMoB薄膜材料的组成和微观结构对其磁性能的影响。

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  • 来源
    《Journal of Applied Physics》 |2012年第11期|113912.1-113912.8|共8页
  • 作者单位

    Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955, Saudi Arabia;

    Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955, Saudi Arabia;

    Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955, Saudi Arabia;

    Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955, Saudi Arabia;

    Department of Electrical Engineering and Computer Science, 1301 Beal Ave., University of Michigan, Ann Arbor, Michigan 48109, USA;

    Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955, Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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